| 摘要 |
PROBLEM TO BE SOLVED: To provide a hetero semiconductor structure having SOI structure containing a silicon-germanium mixed crystal and to provide a method of manufacturing the same with high productivity at a low cost. SOLUTION: The semiconductor substrate constituted by comprising a first layer comprising silicon to which germanium is added, a second layer comprising an oxide adjacent to the first layer and further, a third layer comprising the silicon-germanium mixed crystal adjacent to the second layer, and a manufacturing method of the same are provided. COPYRIGHT: (C)2005,JPO&NCIPI
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