| 发明名称 |
OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE INCLUDING THE OXIDE SEMICONDUCTOR FILM, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE |
| 摘要 |
A novel oxide semiconductor film. An oxide semiconductor film with a small amount of defects. An oxide semiconductor film in which a peak value of the density of shallow defect states at an interface between the oxide semiconductor film and an insulating film is small. The oxide semiconductor film includes In, M (M is Al, Ga, Y, or Sn), Zn, and a region in which a peak value of a density of shallow defect states is less than 1E13 per square cm per volt. |
| 申请公布号 |
US2016260836(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201615058330 |
申请日期 |
2016.03.02 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
OKAZAKI Kenichi;KOEZUKA Junichi;OBONAI Toshimitsu;SAITO Satoru;YAMAZAKI Shunpei |
| 分类号 |
H01L29/786;H01L29/24;H01L29/34;H01L29/04 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxide semiconductor film comprising:
In; M; Zn; and a region in which a peak value of a density of shallow defect states is less than 1×1013 cm−2 eV−1, wherein M is Al, Ga, Y, or Sn. |
| 地址 |
Atsugi-shi JP |
