SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes first semiconductor regions of a first conductivity type spaced apart from each other and second semiconductor regions of a second conductivity type between adjacent first semiconductor regions. At least one second semiconductor region includes a void having at least one outer surface with a crystal plane orientation of (100). A third semiconductor region of the second conductivity type is on each second semiconductor region and a fourth semiconductor region of the first conductivity type is on the third semiconductor region. A gate electrode on is disposed on each first semiconductor region to be adjacent to a third semiconductor region via a gate insulation layer.

主权项

1. A semiconductor device, comprising:
a plurality of first semiconductor regions of a first conductivity type spaced apart along a first direction and extending in a second direction intersecting the first direction; a plurality of second semiconductor regions of a second conductivity type extending in the second direction, each second semiconductor region being between adjacent first semiconductor regions along the first direction, at least one second semiconductor region including a void having at least one outer surface having a crystal plane orientation of (100); a third semiconductor region of the second conductivity type on each second semiconductor region; a fourth semiconductor region of the first conductivity type on the third semiconductor region; and a gate electrode on each first semiconductor region and adjacent to the third semiconductor region via a gate insulation layer.