| 摘要 |
A method for manufacturing an MOS(Metal Oxide Semiconductor) transistor with a recessed gate electrode is provided to improve reliability of gate electrode characteristics by restraining the damage of a substrate due to etching under a channel trench forming process. An active region(14) is defined on a semiconductor substrate(10) by using an isolation layer(12). First oxide patterns and nitride patterns, which have openings to expose the substrate, are formed on the substrate. A second oxide layer is formed along an upper surface of the resultant structure. A sidewall spacer is formed at both inner walls of the opening portion by etching the second oxide layer using an etching point detecting process. A channel trench is formed on the resultant structure by etching the substrate using the sidewall spacer as an etch mask. The sidewall spacer is removed therefrom. A conductive pattern(36a) for filling the opening portion and trench is formed on the resultant structure.
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