发明名称 |
HIGH-ELECTRON-MOBILITY TRANSISTORS |
摘要 |
High-electron-mobility transistors that include field plates are described. In a first implementation, a HEMT includes a first (105) and a second (110) semiconductor material disposed to form a heterojunction (115) at which a two-dimensional electron gas (120) arises and source (125), drain (130), and gate (135) electrodes. The gate electrode is disposed to regulate conduction in the heterojunction between the source electrode and the drain electrode. The gate has a drain-side edge. A gate-connected field plate (140) is disposed above a drain-side edge of the gate electrode and extends laterally toward the drain. A second field plate (145) is disposed above a drain-side edge of the gate-connected field plate and extends laterally toward the drain. |
申请公布号 |
EP3038161(A2) |
申请公布日期 |
2016.06.29 |
申请号 |
EP20150202460 |
申请日期 |
2015.12.23 |
申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
KUDYMOV, ALEXEY;RAMDANI, JAMAL;LIU, LINLIN |
分类号 |
H01L29/778;H01L29/20;H01L29/41 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|