发明名称 FIELD GUIDED POST EXPOSURE BAKE APPLICATION FOR PHOTORESIST MICROBRIDGE DEFECTS
摘要 Embodiments described herein generally relate to methods for mitigating patterning defects. More specifically, embodiments described herein relate to utilizing field guided post exposure bake processes to mitigate microbridge photoresist defects. An electric field may be applied to a substrate being processed during a post exposure bake process. Photoacid generated as a result of the exposure may be moved along a direction defined by the electric field. The movement of the photoacid may contact microbridge defects and facilitate the removal of the microbridge defects from the surface of a substrate.
申请公布号 US2016291476(A1) 申请公布日期 2016.10.06
申请号 US201514677552 申请日期 2015.04.02
申请人 Applied Materials, Inc. 发明人 GODET Ludovic;NAM Sang Ki;OUYANG Christine Y.
分类号 G03F7/40 主分类号 G03F7/40
代理机构 代理人
主权项 1. A method of processing a substrate, comprising: positioning a substrate having a photoresist material disposed thereon patterned with latent image lines in a processing chamber; heating the photoresist material; applying an electric field to the photoresist material in a direction parallel to the latent image lines; and altering a photoacid distribution along the direction parallel to the latent image lines.
地址 Santa Clara CA US