SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

Provided is a semiconductor device. Provided are a first semiconductor layer, and an insulating pattern which covers a first region of the first semiconductor layer and exposes a second region. Provided is a second semiconductor layer which touches the second region of the first semiconductor layer exposed by the insulating pattern and is extended to the insulating pattern. The semiconductor device includes a third semiconductor layer which is provided on the second semiconductor layer and has a lattice constant different from that of the first semiconductor layer.