| 发明名称 | Semiconductor device with electrode structure including graphene pattern formed over metal pattern | ||
| 摘要 | A semiconductor device includes a data storage layer formed over a semiconductor substrate in which a lower structure is formed, and an electrode structure formed on at least one side of the data storage layer over the semiconductor substrate. The electrode structure includes a metal pattern, and a graphene pattern formed over the metal pattern. | ||
| 申请公布号 | US8916973(B1) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201314076889 | 申请日期 | 2013.11.11 |
| 申请人 | SK Hynix Inc. | 发明人 | Kim Eun Seon;Seo Jung Won;Kim Jin Ha |
| 分类号 | H01L45/00;H01L23/34 | 主分类号 | H01L45/00 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device comprising: a data storage layer formed over a semiconductor substrate in which a lower structure is formed; and an electrode structure formed on at least one side of the data storage layer over the semiconductor substrate, wherein the data storage layer includes a phase-change material pattern, and the electrode structure includes a lower electrode disposed below the data storage layer, wherein the lower electrode includes: a heating pattern suitable for contacting the phase-change material pattern, and generating a heat when current flows;a metal pattern provided in a shape to confine the heating pattern; andthe graphene pattern interposed between the metal pattern and the heating pattern. | ||
| 地址 | Gyeonggi-do KR | ||