SEMICONDUCTOR DEVICE INCLUDING ANTIREFLECTIVE LAYER AND FABRICATION METHOD THEREOF

摘要

A semiconductor device including an antireflective part and a method of manufacture thereof are provided to remarkably reduce the surface reflection ratio of the semiconductor device. A semiconductor device comprises an antireflective part(17) having the fine structure in the superficial part; and a metal electrode part(15b) which are formed on the superficial part including antireflective part and are electrically connected. The fine structure is the moth-eye structure. The height of the fine structure is10nm or 10mum. The semiconductor layer is the silicon semiconductor layer, the compound semiconductor layer, or the organic semiconductor layer. The thickness of the metal electrode part is 1nm or 1mum. The semiconductor device is the light emitting device or the photoelectric conversion element.