| 发明名称 |
PHOTORESIST COMPOSITIONS AND METHODS |
| 摘要 |
New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units. |
| 申请公布号 |
US2016320702(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201615142549 |
申请日期 |
2016.04.29 |
| 申请人 |
Rohm and Haas Electronic Materials Korea Ltd. |
发明人 |
Ryu Eui-Hyun;Jang Min-Kyung;Hong Chang-Young;Kim Dong-Yong;Hong Dong-Je;Lim Hae-Jin;Kim Myung Yeol;Jeon Hyun |
| 分类号 |
G03F7/038;G03F7/32;G03F7/20 |
主分类号 |
G03F7/038 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photoresist composition comprising:
(a) a first polymer comprising:
(i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group;(ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units; (b) one or more acid generators. |
| 地址 |
Cheonan KR |
