发明名称 |
SCHOTTKY DIODES WITH MESH STYLE REGION AND ASSOCIATED METHODS |
摘要 |
A Schottky diode comprising a cathode region, an anode region and a guard ring region, wherein the anode region may comprise a metal Schottky contact, and the guard ring region may comprise an outer guard ring and a plurality of inner open stripes inside the outer guard ring, and wherein the inner open stripes has a shallower junction depth than the outer guard ring. |
申请公布号 |
US2016284793(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201514671772 |
申请日期 |
2015.03.27 |
申请人 |
Monolithic Power Systems, Inc. |
发明人 |
Yoo Ji-Hyoung |
分类号 |
H01L29/06;H01L29/66;H01L29/872 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a semiconductor layer of a first doping type; a guard ring region located in the semiconductor layer, wherein the guard ring region is of a second doping type, and wherein the guard ring region comprises:
an outer guard ring; andan inner mesh style region having a plurality of parallel open stripes configured to form a depletion region; a metal Schottky contact located over the guard ring region; and a cathode contact region having the first doping type located in the semiconductor layer and outside of the guard ring region. |
地址 |
San Jose CA US |