SEMICONDUCTOR DEVICE

摘要

In a solid state image sensor which has two photodiodes juxtaposed in a predetermined direction in each pixel and is formed by carrying out divided exposure, that is, exposure treatment of an entire chip by a plurality of times of exposure, image quality is improved and autofocusing speed is increased. Provided is a solid state image sensor having a first exposure region having a first region and a second exposure region having a second region. They overlap with each other in a third region between the first and second regions. In a pixel formed in the third region, a photodiode formed through a mask for first exposure region is placed at a position closer to the side of the second region than another photodiode formed through a mask for second exposure region is.

主权项

1. A semiconductor device having a solid state image sensor, comprising:
a semiconductor substrate having a first region and a second region arranged successively in a first direction along a main surface of the semiconductor substrate and a third region extending between the first region and the second region; a plurality of first pixels juxtaposed in matrix form in the first direction and a second direction orthogonal to the first direction in the first region; a plurality of second pixels juxtaposed in matrix form in the first direction and the second direction in the second region; a plurality of third pixels formed in the third region; and a plurality of first photodiodes, second photodiodes, third photodiodes, and fourth photodiodes formed in the main surface of the semiconductor substrate, wherein the first pixels each have the first photodiode and the second photodiode placed in order of mention in the first direction, wherein the second pixels each have the third photodiode and the fourth photodiode placed in order of mention in the first direction, wherein in the third pixels juxtaposed with the first pixels and the second pixels in the first direction, the second photodiode and the third photodiode are arranged, wherein the third photodiode and the fourth photodiode are deviated in one direction in plan view from the first photodiode and the second photodiode, and wherein in each of the third pixels, the second photodiode is placed at a position closer to the second region than the third photodiode is.