| 摘要 |
PROBLEM TO BE SOLVED: To form a fluorine-added silicon oxide film having excellent performance as an insulating material and an optical material for an electronic device on an optional substrate at room temperature without introducing gas from the outside. SOLUTION: In the method of forming a fluorine-added silicon oxide film, organic polysiloxane 10 as a compound containing an Si-O-Si bond and polytetrafluoroethylene 11 as a compound containing a C-F bond are arranged in a vacuum vessel 1, a silicon substrate 20 as a substrate is arranged and, from a light source 30 containing light of a wavelength of≤170 nm, light is radiated to the organic polysiloxane 10 and polytetrafluoroethylene 11 and also to the silicon substrate 20. Thus, gas is released from the exposed parts of the organic polysiloxane 10 and polytetrafluoroethylene 11, and, utilizing the gas, a fluorine-added silicon oxide film is chemically vapor-deposited on the silicon substrate 20 irradiated with the light. COPYRIGHT: (C)2005,JPO&NCIPI
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