发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which is available under a condition that high voltage is applied thereto.SOLUTION: In a semiconductor device capable of applying high voltage, a signal of high voltage directly applied thereto is divided into a first chip 10 for reducing voltage (step-down) and a second chip 20 for processing signal, lead terminals L1, L2 to which the high voltage is directly applied are mutually separately arranged and arranged separately from other lead terminals L4 to L10 and suspension leads L3, L11 of die pads, and a resin layer 6 is filled between lead terminals to prevent discharge.SELECTED DRAWING: Figure 2
申请公布号 JP2016136608(A) 申请公布日期 2016.07.28
申请号 JP20150140326 申请日期 2015.07.14
申请人 NEW JAPAN RADIO CO LTD 发明人 OHASHI YUYA;YAMASHITA JUN;FUJII YOSHIO;SHIROKURA KOHEI
分类号 H01L25/04;H01L25/18 主分类号 H01L25/04
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