| 摘要 |
A device constituting a constant current source in a semiconductor-integrated circuit device uses a non-volatile semiconductor memory device. The non-volatile semiconductor memory device includes a control gate electrode, a floating gate electrode, source and drain terminals, a first thin gate insulation film under the control gate electrode, and a second gate insulation film which has a thickness for preventing damage even when a voltage exceeding an operating voltage of the semiconductor-integrated circuit device is applied. A charge exceeding the operating voltage is injected from the drain terminal through the second gate insulation film to adjust a threshold voltage. Accordingly, the normally-on type non-volatile semiconductor memory device can prevent leakage of an injection carrier within an operating voltage range. |
