| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which can ensure a high optical output under low drive voltage and which has a dominant wavelength of 520 nm and over.SOLUTION: A semiconductor light emitting element of the present embodiment having a dominant wavelength of 520 nm and over has an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer is composed in such a manner that a laminate of a barrier layer including a first layer composed of an undoped INGaN(0≤X1≤0.01) and a luminescent layer including a second layer composed of InGaN(0.2≤X2<1) is repeated a plurality of cycles. The barrier layer includes at least in any one cycle, a third layer composed of an undoped AlGaN(0<X3<1), the first layer formed in an upper layer of the third layer and a fourth layer which is formed on the first layer and composed of an n-type AlInGaN(0<X4<1,0≤Y4<1).SELECTED DRAWING: Figure 2 |
