发明名称 |
SILICON-CONTAINING SEMICONDUCTOR STRUCTURES, METHODS OF MAKING THE SAME AND DEVICES INCLUDING THE SAME |
摘要 |
A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index. The porous silicon region is manufactured by a strain etching process, which retrofits existing tools for junction isolation and Phosphorous Silicon Glass (PSG) etch in solar cell manufacturing. The retorfitted tools for junction isolation and PSG etch achieves multiple purposes in a single step, including etch-back, PSG etc, antireflection coating, and passivation of the front surface of the solar cell. |
申请公布号 |
WO2016149696(A1) |
申请公布日期 |
2016.09.22 |
申请号 |
WO2016US23370 |
申请日期 |
2016.03.21 |
申请人 |
SPECMAT, INC. |
发明人 |
FAUR, Horia M.;FAUR, Maria;KNIGHT, Gregory;MENDIRATTA, Arjun |
分类号 |
H01L31/0216;H01L21/31;H01L21/469 |
主分类号 |
H01L31/0216 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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