COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) TRANSISTOR AND TUNNEL FIELD-EFFECT TRANSISTOR (TFET) ON A SINGLE SUBSTRATE

摘要

An apparatus includes a structure that includes a single substrate, a planar complementary metal-oxide semiconductor (CMOS) transistor formed on the single substrate, a planar tunnel field-effect transistor (TFET) formed on the single substrate, and a mobility enhancement strength layer included in the planar CMOS transistor or included in the planar TFET.