| 摘要 |
An integrated sensor device and manufacturing method thereof comprises a first substrate (1) and a second substrate (3) having a back cavity (5), and one side of the second substrate (3) having the back cavity (5) is connected above the first substrate (1); an upper end of the first substrate (1) is provided with a first sensitive structure (4) located in the back cavity (5), and an upper end of the second substrate (3) is provided with a second sensitive structure (6). The first substrate (1) and the first sensitive structure (4) of the integrated sensor device form a first sensor, and the second substrate (3) and the second sensitive structure (6) form a second sensor. Integrating two sensors in a vertical direction reduces a transverse dimension of the entire package. Furthermore, using the second substrate (3) in the second sensor as a package cover of the first sensor provides a good protective effect to the first sensitive structure (4). Further, the height of the entire package is reduced and the dimension of the entire package is decreased, thereby satisfying miniaturization development of the modern electronic product. |
