发明名称 |
Semiconductor integrated circuit with tungston silicide nitride thermal resistor |
摘要 |
A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor integrated circuit is produced by a method including the steps of: forming a tungsten silicide nitride film on a semiconductor substrate; patterning the tungsten silicide nitride film in a predetermined pattern to form a thermal resistor; and forming a pair of electrodes to be connected to the thermal resistor. The semiconductor integrated circuit is provided so as to have a predetermined resistance by measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through heating of the thermal resistor with electric power.
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申请公布号 |
US6025632(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19970988799 |
申请日期 |
1997.12.11 |
申请人 |
MATSUSHITA ELECTRONICS CORP. |
发明人 |
FUKUDA, TAKESHI;TAKENAKA, HIROSHI;FURUKAWA, HIDETOSHI;FUKUI, TAKESHI;UEDA, DAISUKE |
分类号 |
H01L29/74;H01L21/822;H01L23/58;H01L27/04;H01L27/06;H01L27/08;(IPC1-7):H01L23/62 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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