HETERO JUNCTION BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To make it possible to readily manufacture InP-based HBT superior in high frequency characteristics.SOLUTION: A hetero junction bipolar transistor comprises: a first base 105 formed by a p-type InGaAsSb doped with carbon; and a second base 106 formed by a p-type GaAsSb doped with carbon. The second base 106 is higher than the first base 105 in hole concentration. The first base 105 may have a hole concentration of 1×10cmor more. The first base 105 is arranged so that a region closer to the second base 106 in a laminating direction becomes lower in In composition and Sb composition and therefore, has a larger band gap (inclination in composition).SELECTED DRAWING: Figure 1