PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS

摘要

Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

主权项

1. A memory system comprising:
a controller to control the system; and a memory device, coupled to the controller, the memory device comprising multiple memory stacks, each memory stack comprising:
a first carbon electrode;a selector device on the first carbon electrode;a second carbon electrode on the selector device;a phase change material on the second carbon electrode;a third carbon electrode on the phase change material;an adhesion species doped into each sidewall of the memory stack, wherein the adhesion species is configured to intermix with the carbon of the second electrode; anda sidewall liner material on the sidewalls of the memory stack wherein the sidewall liner comprises a deposited film of the adhesion species that has been implanted with a dielectric material.