| 摘要 |
A method for manufacturing a dual damascene structure includes forming a wiring layer over a substrate, forming an inorganic insulating film over the wiring layer, forming a via hole in the inorganic insulating film using a first resist pattern with an opening as an etching mask, removing the first resist pattern, forming an organic insulating film on the inorganic insulating film and in the via hole, forming a hard mask on the organic insulating film, forming a hard mask pattern using a second resist pattern with an opening on the hard mask as an etching mask, forming a wiring groove by etching the organic insulating film using the second resist pattern and the hard mask pattern as etching masks until the organic insulating film inside the via hole is eliminated and simultaneously eliminating the second resist pattern, and implanting a conductive substance into the via hole and wiring groove.
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