发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH POWER SUPPLY WIRING ON THE MOST UPPER LAYER |
摘要 |
A memory cell array in a semiconductor substrate has a plurality of memory cells arranged in rows and columns. A first circuit is located at one end of the memory cell array in a column direction. A second circuit is located at the other end of the memory cell array in the column direction. A first wire is located above the memory cell array between the first circuit and the second circuit. The first wire is located in a most upper layer in the semiconductor substrate to supply power to the second circuit.
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申请公布号 |
US2009027941(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20070782311 |
申请日期 |
2007.07.24 |
申请人 |
MAEJIMA HIROSHI;ABE TAKUMI;HAMADA MAKOTO |
发明人 |
MAEJIMA HIROSHI;ABE TAKUMI;HAMADA MAKOTO |
分类号 |
G11C5/06 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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