发明名称 SEMICONDUCTOR MEMORY DEVICE WITH POWER SUPPLY WIRING ON THE MOST UPPER LAYER
摘要 A memory cell array in a semiconductor substrate has a plurality of memory cells arranged in rows and columns. A first circuit is located at one end of the memory cell array in a column direction. A second circuit is located at the other end of the memory cell array in the column direction. A first wire is located above the memory cell array between the first circuit and the second circuit. The first wire is located in a most upper layer in the semiconductor substrate to supply power to the second circuit.
申请公布号 US2009027941(A1) 申请公布日期 2009.01.29
申请号 US20070782311 申请日期 2007.07.24
申请人 MAEJIMA HIROSHI;ABE TAKUMI;HAMADA MAKOTO 发明人 MAEJIMA HIROSHI;ABE TAKUMI;HAMADA MAKOTO
分类号 G11C5/06 主分类号 G11C5/06
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