发明名称 成膜方法および成膜装置
摘要 A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at least one of exhausting the processing chamber and supplying a purge gas into the processing chamber to remove gas remaining in the processing chamber; supplying an oxidant gas into the processing chamber; and performing at least one of exhausting the processing chamber and supplying the purge gas into the processing chamber to remove gas remaining in the processing chamber, wherein supplying an oxidant gas includes: supplying a first oxidant gas into the processing chamber at a first concentration; and supplying a second oxidant gas into the processing chamber at a second concentration higher than the first concentration.
申请公布号 JP6017361(B2) 申请公布日期 2016.10.26
申请号 JP20130073125 申请日期 2013.03.29
申请人 東京エレクトロン株式会社 发明人 清水 亮;綱取 剛;中島 滋
分类号 H01L21/316;C23C16/40;C23C16/44;C23C16/455;H01L21/31 主分类号 H01L21/316
代理机构 代理人
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