METHOD OF CALCULATING IRRADIATION ENERGY, METHOD OF CALCULATING PROXIMITY EFFECT, METHOD OF DESIGNING MASK OR RETICLE PATTERN, CHARGED-PARTICLE-BEAM EXPOSURE SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of exactly calculating the irradiation energy on a prescribed area of a sensitized substrate by deriving a representative figure which reflects the length/width ratio of an original pattern. SOLUTION: The representative figure 14 is a rectangle, the area of which is set equal to the total area of the original pattern 12 and the position of the center of gravity of which is set equal to that of the original pattern 12, while the ratio of the length of the side in x-axis direction to that in y-axis direction is (Ix)1/2:(Iy)1/2, where the directions of the sides of the rectangle 14 are the x-axis direction and the y-axis direction, and the sum of the moments of inertia of the original pattern with respect to an axis parallel to the x-axis and passing through the center of gravity is defined as Ix, while the sum of the moments of inertia of the original pattern with respect to an axis parallel to the y-axis and passing through the center of gravity is define as Iy.