| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device capable of controlling a plasma distribution when high-frequency electromagnetic waves of different frequencies are applied to a discharge mechanism in the plasma processing device in a case of carrying out plasma processing such as etching or CVD for manufacturing a semiconductor device. SOLUTION: An antenna 11 as a discharge mechanism is connected to a first power supply 13 and a second power supply 15, and at least either of them is turned OFF or ON so as to control a distribution of plasma. |
