| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of using an inexpensive zinc oxide material as a translucent conductive film of a photoelectric conversion device.SOLUTION: The photoelectric conversion device includes, between a first electrode and a second electrode, at least one unit cell in which a first impurity semiconductor layer of a first conductivity type, a semiconductor layer, and a second impurity semiconductor layer of a conductivity type opposite to that of the first impurity semiconductor layer are sequentially laminated to constitute a semiconductor junction. The first electrode or the second electrode is formed of a conductive oxynitride containing zinc and aluminum. In the conductive oxynitride containing zinc and aluminum, the composition ratio of zinc is 47 atom% or less and is greater than that of aluminum, the composition ratio of aluminum is greater than that of nitrogen, and the nitrogen concentration measured by secondary ion mass spectrometry is 5.0×10atoms/cmor more. |
