| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems, wherein in exposure by dipole illumination light using a conventional photomask, the resolution in a specified direction is very much degraded. <P>SOLUTION: A photomask 1 to be used for exposure of a semiconductor wafer by dipole illumination light includes a main opening 10, an auxiliary opening 22 (first auxiliary opening), an auxiliary opening 24 (second auxiliary opening), an auxiliary opening 26 (third auxiliary opening), and an auxiliary opening 28 (fourth auxiliary opening). Each of auxiliary openings 22, 24, 26, 28 is placed, in such a manner that the center points 23, 25, 27, 29 avoid both a straight line L1 (first straight line) parallel to a first direction and passing over the center point 11 of the main opening 10, and a straight line L2 (second straight line) parallel to a second direction and passing over the center point 11. <P>COPYRIGHT: (C)2007,JPO&INPIT |
