| 摘要 |
PROBLEM TO BE SOLVED: To pattern a shape at a good accuracy for processing when a micro hole pattern like a contact hole in a semiconductor integrated circuit is formed. SOLUTION: A hard mask is manufactured for forming the contact hole. This hard mask is constituted by overlapping a first hard mask 32 formed in a direction parallel to an element formation region 17 with a second hard mask 34 formed in a direction intersecting the element formation region 17, these hard masks being manufactured at the other lithography steps, respectively. The first hard mask 32 and the second hard mask 34 have a stripe-shaped opening and an opening of the contact hole is formed at its intersection part. By use of the hard mask manufactured by such a process of a two-time exposure and two-time processing, it becomes possible to process a more micro and identical contact hole than patterning by a reticle of a hole-shaped pattern. COPYRIGHT: (C)2008,JPO&INPIT
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