| 摘要 |
A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers ( 11,13,15,17 ) with each pair of barrier layers being separated by a quantum well layer ( 12,14,16 ), comprises annealing each barrier layer ( 11,13,15,17 ) separately. Each barrier layer ( 11,13,15,17 ) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.
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