发明名称 |
METHOD FOR MANUFACTURING FLAT SUBSTRATES |
摘要 |
<p>For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of aμc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13).</p> |
申请公布号 |
EP1899498(A1) |
申请公布日期 |
2008.03.19 |
申请号 |
EP20060763956 |
申请日期 |
2006.06.28 |
申请人 |
OC OERLIKON BALZERS AG |
发明人 |
TRAN QUOC, HAI;VILLETTE, JEROME |
分类号 |
C23C16/44;C23C30/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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