发明名称 RESIN COMPOSITION FOR FINE PATTERN FORMATION AND FINE PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resin composition which is applied on a resist pattern when the resist pattern is heat-treated to form a fine pattern, and which can smoothly and more stably shrink the resist pattern upon heat treatment and can easily be removed by subsequent treatment with an alkaline aqueous solution, and to efficiently form a fine resist pattern using the same. <P>SOLUTION: The resin composition for fine pattern formation comprises a resin, a crosslinking component which crosslinks the resin and a solvent, wherein the resin comprises a repeating unit (I) represented by formula (1). In formula (1), R<SP>1</SP>represents a hydrogen atom, a methyl group or a trifluoromethyl group; R<SP>2</SP>represents a hydrogen atom, a linear alkoxyl group or a hydroxyl group; when R<SP>2</SP>is a hydrogen atom or a hydroxyl group, n is an integer of 2-8; when R<SP>2</SP>is a linear alkoxyl group, n is an integer of 2-7, and the carbon number of -(CH<SB>2</SB>)<SB>n</SB>-R<SP>2</SP>including the carbon number of the linear alkoxyl group is 2-8. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008225172(A) 申请公布日期 2008.09.25
申请号 JP20070064845 申请日期 2007.03.14
申请人 JSR CORP 发明人 SUGIURA MAKOTO;NAGAI TOMOKI;ABE TAKEYOSHI;NAKAMURA ATSUSHI
分类号 G03F7/40;C08F212/04;C08F220/10;C08F220/58;H01L21/027 主分类号 G03F7/40
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