EUV PELLICLE FABRICATION METHODS AND STRUCTURES THEREOF

摘要

A method for fabricating a pellicle for EUV lithography processes includes placing a hard mask in contact with a surface of a substrate. In some embodiments, the hard mask is configured to pattern the surface of the substrate to include a first region and a second region surrounding the first region. By way of example, while the mask in positioned in contact with the substrate, an etch process of the substrate is performed to etch the first and second regions into the substrate. Thereafter, an excess substrate region is removed so as to separate the etched first region from the excess substrate region. In various embodiments, the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.

主权项

1. A method, comprising:
placing a mask in contact with a first surface of a substrate, wherein the mask is configured to pattern the first surface of the substrate to include a first region and a second region surrounding the first region; while the mask in positioned in contact with the first surface of the substrate, performing an etch process of the substrate to etch the first and second regions into the first surface of the substrate; and removing an excess substrate region to separate the etched first region from the excess substrate region, wherein the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.