发明名称 |
Sensor Device |
摘要 |
Provided is a sensor device that suppresses a malfunction caused by a negative surge or a voltage drop. A sensor device includes a sensor element having an electrical characteristic varying according to a physical amount, a signal processing circuit configured to process an output signal of the sensor element, a transistor element interposed between a power source terminal and the signal processing circuit, a resistive element configured to connect a drain and a gate of the transistor element, or a collector and a base of the transistor element, and an element having threshold voltage for connecting the gate or the base of the transistor element to a GND. The element regulates current flowing from the resistive element in a direction of the GND, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage. |
申请公布号 |
US2016241014(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201415029639 |
申请日期 |
2014.10.03 |
申请人 |
Hitachi Automotive Systems, Ltd. |
发明人 |
ASANO Satoshi;MATSUMOTO Masahiro;NAKANO Hiroshi;TASHIRO Shinobu |
分类号 |
H02H3/18;G01R15/14;H01L27/02;H01L29/861;H01L49/02;H02H3/24;H01L27/06 |
主分类号 |
H02H3/18 |
代理机构 |
|
代理人 |
|
主权项 |
1. A sensor device comprising:
a sensor element having an electrical characteristic varying according to a physical amount; a signal processing circuit configured to process an output signal of the sensor element; a transistor element interposed between a power source terminal and the signal processing circuit; a resistive element configured to connect a drain and a gate of the transistor element, or a collector and a base of the transistor element; and an element having threshold voltage for connecting the gate or the base of the transistor element to a GND, wherein the element regulates current flowing from the resistive element in a direction of the GND, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage. |
地址 |
Hitachinaka-shi, Ibaraki JP |