ETCHING SOLUTION COMPOSITION FOR COPPER-BASED METAL LAYER AND ETCHING METHOD USING THE SAME

摘要

The present invention relates to an etching solution composition for copper-based metal films and an etching method using the same. According to the present invention, the etching solution composition comprises: (a) 0.5-20 wt% of persulfate; (b) 0.01-2 wt% of a fluorine compound; (c) 1-10 wt% of inorganic acid; (d) 0.5-3 wt% of a thiazole compound; (e) 0.1-5 wt% of a chlorine compound; (f) 0.01-3 wt% of a copper compound; (g) 0.1-10 wt% of organic acid or an organic acid salt; and (h) residual water, with respect to the total weight of the composition. According to the present invention, the etching solution composition prevents precipitation of copper ions occurring in etching solutions.