发明名称 |
THROUGH-SILICON VIA FORMING PRODUCTION SYSTEM, THROUGH-SILICON VIA FORMING PRODUCTION METHOD, STORAGE MEDIUM, AND PROGRAM |
摘要 |
The through-silicon via (TSV) forming production system according to the present invention includes: X-ray inspection devices (10, 11, 12) that acquire images showing the shape of a through-silicon via (70) formed in a silicon substrate and the state of a plating film in the through-silicon via; a defect pattern determining means (21) that determines the presence/absence of a void defect in the plating film on the basis of the acquired images, and classifies, when detecting the void defect, the void defect to one of a plurality of predetermined defect patterns; a failed treatment specifying means (22) that specifies a failed treatment which has caused the void defect, in accordance with the classified predetermined defect pattern; and a control means (23) that instructs a treatment device performing the failed treatment to perform a change treatment for correcting the failed treatment. The present invention can provide a through-silicon via forming production system that enables in-line non-destructive TSV inspection. |
申请公布号 |
WO2016158576(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
WO2016JP59030 |
申请日期 |
2016.03.22 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
UMEHARA, Yasutoshi;NAMIOKA, Ichiro |
分类号 |
G01N23/04;G01B15/00;G01B15/02;G01B15/04;G01N23/18;G05B19/418 |
主分类号 |
G01N23/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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