发明名称 |
GATE-TUNABLE ATOMICALLY-THIN MEMRISTORS AND METHODS FOR PREPARING SAME AND APPLICATIONS OF SAME |
摘要 |
In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel. |
申请公布号 |
WO2016134011(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
WO2016US18257 |
申请日期 |
2016.02.17 |
申请人 |
NORTHWESTERN UNIVERSITY |
发明人 |
HERSAM, Mark C.;SANGWAN, Vinod K.;JARIWALA, Deep M.;KIM, In Soo;MARKS, Tobin J.;LAUHON, Lincoln J. |
分类号 |
G11C11/16;G11C13/00 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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