METHOD FOR MANUFACTURING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a transistor is provided to enable improvement of a long period of working reliability of transistor by reducing dangling bond. CONSTITUTION: The method comprises the steps of: forming a gate pattern(300) on a semiconductor substrate(100); annealing the substrate with the gate pattern formed thereon under deuterium atmosphere; and forming a material film serving as a diffusion barrier coating the gate pattern or the substrate for which the annealing is performed. The annealing is performed under temperature conditions of about 400°C¯500°C for approximately 1¯60 minutes. Before the annealing step, a spacer is further formed on side wall of the gate pattern. Thereby, the number of dangling bond can be reduced, so that a Hot Carrier Immunity characteristic and a long period of working reliability of transistor can be improved.