A magnetoresistive head and a manufacturing method thereof

摘要

To reduce influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, moreover lower deterioration of dielectric breakdown voltage between an upper magnetic shield layer and a lower magnetic shield layer, and maintain electrostatic capacity to a small value in a CPP magnetoresistive head. The length in the sensor height direction of bottom surface of a pinning layer (13) is longer than the length in the sensor height direction of bottom surface of a first ferromagnetic layer (14), angle formed by an edge in the sensor height direction of the pinning layer (13) to the surface extended from bottom surface of a magnetoresistive film is smaller than the angle formed by an edge in the sensor height direction of a second ferromagnetic layer (16) to the surface extended from bottom surface of the magnetoresistive film, and height of top surface of a sensor height direction refill film (18) is equal to or higher than the top surface of the magnetoresistive film.