Write Enhancement for One Time Programmable (OTP) Semiconductors

摘要

A method of programming one-time programmable (OTP) memory cells in an array is described. Each memory cell has a MOSFET programming element and a MOSFET pass transistor, the MOSFET pass transistor having a gate electrode over a channel region between two source/drain regions, and the MOSFET programming element having a gate electrode over a channel region contiguous to a source/drain region either part of, or connected to, one of the two source/drains associated with the MOSFET pass transistor. The other source/drain region of the MOSFET pass transistor is coupled to a bit line. The memory cell is programmed by setting a first voltage of a first polarity on the gate electrode of the pass transistor to electrically connect the source/drain regions of the pass transistor; setting a second voltage of the first polarity on the gate electrode of the programming element; and setting a third voltage of a second polarity on the bit line. The voltage across an oxide layer between the gate electrode and channel region of the programming element ruptures the oxide layer and effectively programs the programming element.

主权项

1. In a memory cell having a programmable element and a pass transistor connectable in series to a bit line, a method of programming the memory cell comprising:
setting a first voltage of a first polarity on a first gate electrode of the programming element; setting a second voltage of the first polarity on a second gate electrode of the pass transistor; setting a third voltage on a bit line connected to the pass transistor, the third voltage of a second polarity opposite the first polarity; and rupturing an oxide layer between the first gate electrode and a channel region of the programming element.