| 摘要 |
PROBLEM TO BE SOLVED: To increase the efficiency of RF power of a semiconductor device which has a distribution circuit of two branches and two stages, four juxtaposed interdigital MESFET, and a composite circuit of two branches and two stages. SOLUTION: The semiconductor device contains a circuit configuration which has an input distribution circuit 16 of two branches and two stages, four juxtaposed interdigital MESFETs (18, 20, 22, 24), and an output composite circuit 26 of two branches and two stages. One electrode width 2w of a source electrode 34 and a drain electrode 32 of the two interdigital MESFETs (20, 22) arranged inside is wider than an electrode width 2v of the source electrode 34 of the two interdigital MESFETs (18, 24) arranged outside, and an electrode width 2u of the drain electrode 32, respectively. COPYRIGHT: (C)2006,JPO&NCIPI
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