发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a technique having a high degree of flexibility with which an inductance element's utilization efficiency, etc. can be improved, when forming the inductance element on a semiconductor substrate. SOLUTION: A whorl-like wiring pattern is formed on a semiconductor substrate. A plurality of terminals 402 to 407 are connected to this wiring pattern. Switching elements 534, 541, 562, and 573 are closed. The terminal 403 is connected to an external terminal 604. The terminal 404 is connected to an external terminal 601. The terminal 406 is connected to an external terminal 602. The terminal 407 is connected to an external terminal 603. The desired zone of an inductance element 3 (from the terminal 403 to the terminal 407) can be chosen and used. An arbitrary terminal (terminal 404, 406) can be used as a tap. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006156889(A) 申请公布日期 2006.06.15
申请号 JP20040348681 申请日期 2004.12.01
申请人 YAMAHA CORP 发明人 HIRAI YOSHIYASU
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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