| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory element which obtains a sufficient output in case of reading recorded information and which reduces a current value required for writing by improving a spin injection efficiency. SOLUTION: Magnetization fixed layers 11 and 15 are formed through spacer layers 12 and 14, respectively to the upper and lower sides of a memory layer 13 which hold information according to the magnetization state of a magnetic substance, the directions of the magnetization M1 and M3 of ferromagnetic layers 11 and 15 nearest to the memory layer 13 in the magnetization fixed layers 11 and 15 of the upper and lower sides of the memory layer 13 are reverse mutually. The direction of the magnetization M2 of the memory layer 13 changes by passing a current in the direction of lamination, the information is recorded in the memory layer 13, and the memory element 10 in which the areas of two spacer layers 12 and 14 of the upper and lower sides of the memory layer 13 differ is constituted. COPYRIGHT: (C)2006,JPO&NCIPI
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