| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved method for laser-welding of a lead frame by which high reproducibility welding without variation is achieved utilizing low power laser light. <P>SOLUTION: In the method for manufacturing a semiconductor device; a wiring structure is formed by applying laser light to an upper surface of a junction of a lead frame, and superimposing the junction on a material to be joined, while a heat spreader 5 is mounted on a main upper electrode of a semiconductor chip on an insulating substrate, and a strap-like lead frame 6 as a lead material for the internal wiring is disposed among a conductive pattern of the insulating substrate, a heat spreader, and an input-output terminal. The junction is superimposed on the material to be joined, and the laser light 13 is applied to the upper surface of the lead frame junction to carry out weld joining between the lead frame and the material to be joined (heat spreader) after making coarse the upper surface (or a back surface of the junction of the lead frame or both of the upper and back surfaces). <P>COPYRIGHT: (C)2008,JPO&INPIT |
