发明名称 PROCEDURE FOR IN-SITU DETERMINATION OF THERMAL GRADIENTS AT THE CRYSTAL GROWTH FRONT
摘要 <p>PURPOSE: A procedure for in-situ determination of thermal gradients at the crystal growth front is provided to determine in-situ crystallization of the temperature gradients of the melt during crystallization by controlling pull speed. CONSTITUTION: A crucible(116) receives a melt(118). A crystal pulling part pulls the crystallization by a predetermined pulling speed from the crucible. The crystal diameter sensor measures the diameter of crystallization. The controller(102) is connected to the crystals pulling part. The controller applies a control signal to the crystals pulling part to control the pulling rate. The controller determines the thermal gradients for the crystal growth front and melt based on the change of the diameter of crystallization.</p>
申请公布号 KR20100014169(A) 申请公布日期 2010.02.10
申请号 KR20090070448 申请日期 2009.07.31
申请人 SUMCO PHOENIX CORPORATION;SUMCO CORPORATION 发明人 ORSCHEL BENNO;BUCZKOWSKI ANDRZEJ;KEARNS JOEL;TAKANASHI KEIICHI;TODT VOLKER
分类号 C30B15/20 主分类号 C30B15/20
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