发明名称 |
Verfahren zum Bearbeiten eines Halbleitersubstrats und Verfahren zum Bearbeiten eines Halbleiterwafers |
摘要 |
According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies. |
申请公布号 |
DE102015119413(A8) |
申请公布日期 |
2016.07.21 |
申请号 |
DE201510119413 |
申请日期 |
2015.11.11 |
申请人 |
Infineon Technologies AG |
发明人 |
Heinrici, Markus;Hirschler, Joachim;Mischitz, Martin;Roesner, Michael;Stranzl, Gudrun;Zgaga, Martin |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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