发明名称 Verfahren zum Bearbeiten eines Halbleitersubstrats und Verfahren zum Bearbeiten eines Halbleiterwafers
摘要 According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.
申请公布号 DE102015119413(A8) 申请公布日期 2016.07.21
申请号 DE201510119413 申请日期 2015.11.11
申请人 Infineon Technologies AG 发明人 Heinrici, Markus;Hirschler, Joachim;Mischitz, Martin;Roesner, Michael;Stranzl, Gudrun;Zgaga, Martin
分类号 H01L21/283 主分类号 H01L21/283
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