INTEGRATED HIGH SIDE GATE DRIVER STRUCTURE AND CIRCUIT FOR DRIVING HIGH SIDE POWER TRANSISTORS

摘要

The present invention relates to an integrated high side gate driver structure for driving a power transistor. The high side gate driver structure comprises a semiconductor substrate comprising a first polarity semiconductor material in which a first well diffusion comprising a second polarity semiconductor material is formed. A peripheral outer wall of the first well diffusion is abutted to the semiconductor substrate. A second well diffusion, comprising first polarity semiconductor material, is arranged inside the first well diffusion such that an outer peripheral wall of the second well diffusion is abutted to an inner peripheral wall of the first well diffusion. The integrated high side gate driver structure further comprises a gate driver comprising a high side positive supply voltage port, a high side negative supply voltage port, a driver input and a driver output, wherein the gate driver comprises a transistor driver arranged in the second well diffusion such that a control terminal of the transistor driver and an output terminal of the transistor driver is coupled to the driver input and the driver output, respectively; the integrated high side gate driver structure also comprises a first electrical connection between the first well diffusion and the high side negative supply voltage port and a second electrical connection between the second well diffusion and the high side negative supply voltage port.

主权项

1. An integrated high side gate driver structure for driving a power transistor, comprising:
a semiconductor substrate comprising a first polarity semiconductor material in which a first well diffusion is formed, the first well diffusion comprising a second polarity semiconductor material and having a peripheral outer wall abutted to the semiconductor substrate, a second well diffusion comprising first polarity semiconductor material arranged inside the first well diffusion such that an outer peripheral wall of the second well diffusion is abutted to an inner peripheral wall of the first well diffusion; and a gate driver comprising a high side positive supply voltage port, a high side negative supply voltage port, a driver input and a driver output, wherein the gate driver comprises a transistor driver arranged in the second well diffusion such that a control terminal and an output terminal of the transistor driver are coupled to the driver input and driver output, respectively, a first electrical connection between the first well diffusion and the high side negative supply voltage port and a second electrical connection between the second well diffusion and the high side negative supply voltage port.