SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES

摘要

A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.

主权项

1. A semiconductor device, comprising:
a gate conductor formed on a substrate; and a deposited doped layer formed in recesses adjacent to the gate conductor and extending along sidewalls of the gate conductor to form vertical portions, the doped layer forming source and drain regions for the semiconductor device; the gate conductor being shaped between the vertical portions to permit formation of a dielectric material between the gate conductor and the vertical portions.