| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly efficient nitride compound semiconductor element and its manufacturing method, which prevents impairment of breakdown voltage caused by thinning of oxide film or insulating film, and a deterioration of DC gain gm caused by excess of thickness. SOLUTION: In a selective growth method, n+ contact regions 8 and 9 in ohmic contact with a source electrode and a drain electrode, respectively, and an n- region 10 called a reduced surface field layer (reduced surface field region) aiming at relaxation of electric field concentration, are respectively formed. After the formation of the n+ contact regions 8 and 9 and the n- region 10 in the selective growth method, protruded portions 8a, 9a, and 10a produced by the selective growth, respectively, in the n+ contact regions 8 and 9 and the n- region 10, are flattened by chemimechanical polishing (CMP) method. COPYRIGHT: (C)2008,JPO&INPIT
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